SEMICONDUCTOR MODULE OF RECTIFIER Russian patent published in 2004 - IPC

FIELD: high-power semiconductor equipment.

SUBSTANCE: semiconductor module of rectifier includes case made of dielectric material, metal base that carries case, semiconductor rectifying elements positioned in case, sealing dielectric material, which fills up internal space of case, leads-out meant for connection of module to electric circuit. Flat lower current lead bent at angle of 90 degrees is put on plane of base. Rectifying elements of first row are installed on plane of lower current lead-out, parallel to plane of base. Flat current leads-out of first row bent at angle of 90 degrees are put on each rectifying element of first row. Rectifying elements of second row are positioned on planes of current leads-out of first row parallel to plane of base. Upper current lead-out bent at angle of 90 degrees, common for rectifying elements of second row is mounted on rectifying elements of second row. Flat planes of current leads-out, perpendicular to plane of base protrude beyond case and form outer leads-out. Lead f lower current led and lead of upper current lead-out are located one straight line and their planes are parallel one another. Leads of current leads-out of first row are arranged on opposite sides of this straight line.

EFFECT: ensured current load thanks to more intensive heat removal through plane of base and reduced overall dimensions of rectifier.

2 cl, 4 dwg