MECHANICAL DESIGN OF SEMICONDUCTOR DEVICE Russian patent published in 2004 - IPC

FIELD: power semiconductor engineering. SUBSTANCE: semiconductor device has metal base with stand that functions as one of device electrodes; base-mounted case made of insulating material; stand-mounted semiconductor rectifying element; terminal secured on semiconductor rectifying element and used as other electrode of device; as well as sealing dielectric materials filling case interior. Side surface of stand protruding above remaining parts of metal base is provided with depressions disposed along stand height and used as locking means for sealing dielectric material; it has internal collar enveloping stand by minimum 90 deg. Collar may be provided with through hollows made through its height which communicate with base stand locking means and top part of case disposed above collar; the latter tightly encloses top part of stand and protrudes above the latter through height exceeding that of semiconductor rectifying element. Collar may have minimum two segments spaced at least half the stand height apart. EFFECT: enhanced resistance to temperature fluctuations; exclusion of angular and linear displacements of compound. 3 cl, 8 dwg