HIGH-VOLTAGE DIODE Russian patent published in 2004 - IPC

FIELD: high-power semiconductor equipment.

SUBSTANCE: high-voltage diode comprises case in the form of dielectric tube which ends carry electrodes, assemblage of rectifying elements connected in series and arranged inside tube. Each element includes metal base and semiconductor crystal anchored on base, spring creating pressure electric contact between rectifying elements. Butt of spring carries contact unit made of two electrically connected metal bodies and dielectric spacer placed between them, protruding beyond boundaries of these bodies. Uniaxial protrusions and recesses housing semiconductor crystals are made in bases, Spacers of dielectric material protruding beyond boundaries of bases and securing alignment of bases along axis of tube are fixed. Compensator of thermal expansion of liquid is placed and sealed inside tube near its butt. Internal space of tube together with rectifying elements installed in it is filled up to compensator with dielectric liquid, for instance, polymethylsiloxane fluid. Outside butts of tube are sealed leak-tight with covers. Compensator can be produced from elastic material and have shape of cap which walls are tightly pressed against wall of tube. Internal space of cap communicating with internal space of tube is filled with dielectric liquid and volume of tube located outside of cap is filled with gas. Compensator can be arranged inside dielectric liquid, can have by-pass conduits ensuring transfer of liquid from volumes of tube separated by compensator. At least one spring can be placed between rectifying elements and one electrode as minimum can have ribs.

EFFECT: diminished mechanical stresses in semiconductor crystals, improved cooling conditions.

5 cl, 7 dwg