FIELD: electric engineering.
SUBSTANCE: device has semiconductor element of sensor with active area, wherein during operation a signal is formed in response to magnetic field. Semiconductor element is, at least partially, in mode of no-admixture conductivity with no displacement and normal operation temperature. Element has pass, which may be displaced for lowering no-admixture conductivity in active area and limiting charge carriers mostly by one type in accordance to saturated admixture mode, and includes means for detecting signal formed I active area in response to applied magnetic field.
EFFECT: higher precision of measurements.
2 cl, 16 dwg
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Authors
Dates
2004-10-20—Published
2001-05-02—Filed