MAGNETIC FIELD SENSOR Russian patent published in 2004 - IPC

Abstract RU 2238571 C2

FIELD: electric engineering.

SUBSTANCE: device has semiconductor element of sensor with active area, wherein during operation a signal is formed in response to magnetic field. Semiconductor element is, at least partially, in mode of no-admixture conductivity with no displacement and normal operation temperature. Element has pass, which may be displaced for lowering no-admixture conductivity in active area and limiting charge carriers mostly by one type in accordance to saturated admixture mode, and includes means for detecting signal formed I active area in response to applied magnetic field.

EFFECT: higher precision of measurements.

2 cl, 16 dwg

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RU 2 238 571 C2

Authors

Ehshli Timoti

Ehlliott Charl'Z Tomas

Fillips Timoti Dzhonatan

Dates

2004-10-20Published

2001-05-02Filed