FIELD: semiconductor electronics; bipolar structures responsive to magnetic field effect.
SUBSTANCE: proposed device has bipolar magnetic field sensing transistor formed in pocket; its base contacts are disposed between emitter and working collectors. Base contacts are doped through entire depth and width of pocket, Electrical connection is introduced between base and substrate contacts.
EFFECT: reduced dependence of bipolar transistor sensitivity on device surface condition.
1 cl, 6 dwg
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