FIELD: heat energy conversion.
SUBSTANCE: highly doped n* region can serve as emitter region wherefrom charge carriers can be injected to gap region. The latter may be p region made of dope-free conductor or it may be moderately doped n region. Hot ohmic contact is connected to n* region, Cold ohmic contact functions as collector and is connected to other end of gap region. Cold ohmic contact has recombination region formed between cold ohmic contact and gap region as well as compensation blocking layer that reduces thermoelectric reverse-current component. Emitter heated with respect to collector generates electromotive force inducing current through series-connected load.
EFFECT: enhanced efficiency of conversion.
63 cl, 50 dwg
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