FIELD: electronics.
SUBSTANCE: method includes use of tungsten trioxide and oxide or carbonate of bivalent metal, tungsten trioxide and or carbonate of univalent metal and trivalent metal oxide, or tungstate having molecular formula XIIIWO4 or XIXIII(WO4)2, where XI means univalent metal, XII means bivalent metal and XIII means trivalent metal, which is formed by heating said oxides and or carbonates, and then heating grown mono-crystal of tungstate at temperature from 6000 to 1550° in atmosphere, where partial pressure of oxygen is adjusted to be negative relatively to partial pressure of oxygen in atmospheric air.
EFFECT: better quality and broader range of use for mono-crystal.
15 dwg, 10 ex, 1 tbl
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