FIELD: chemistry.
SUBSTANCE: invention can be used in the technology of materials for photonics and electronics. Disclosed is a method of producing high-purity tungsten (VI) oxide by recrystallisation, involving a step for dissolving, cleaning the solution of impurities, deposition and thermal decomposition. Tungsten oxide is dissolved in ammonia solution, then filtered from suspended particles and crystallized by evaporation method. Formed precipitate is then separated from the mother solution, dried, heated to 500 °C and annealed at temperature 500 °C for 30 minutes and at 800 °C for 2 hours. After annealing and cooling of the reactor, high-purity tungsten (VI) oxide is extracted in a glove box.
EFFECT: invention simplifies the process of purifying tungsten (VI) oxide by cutting the number of steps to obtain highly pure tungsten (VI) oxide with chemical purity of not less than 99.99 wt.%.
6 cl, 2 tbl, 2 ex
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