MICROWAVE AMPLIFIER Russian patent published in 2010 - IPC H03F3/60 H03F3/189 H03F3/16 

FIELD: electric engineering.

SUBSTANCE: microwave amplifier comprises two identical transmission lines, one - at the inlet, the other one - at the outlet, two identical dividing capacitors arranged each at the ends of transmission line, field transistor (FT) with Schottky barrier connected to common source by circuit, source of positive DC voltage connected to drain of FT with Schottky barrier through inductance. The second FT is added with Schottky barrier and two inductances - the second and the third, at the same time drain of the second FT with Schottky barrier is connected to transmission line at the outlet through dividing capacitor and simultaneously with the drain of the first FT with Schottky barrier through the second inductance, gate of the second FT with Schottky barrier is connected to source of the first FT with Schottky barrier, and their common grounding point is grounded through the third inductance, source of the second FT with Schottky barrier is grounded, at the same time the first and second inductances are arranged as identical in value, which is identified on the basis of the following expression: L2-L1-2Z0/(2πf0), where Z0 - wave resistance of transmission line, π=3.14 f0 - central frequency of working frequency band, and value of the third inductance is identified based on the following expression: L3=L1/5.

EFFECT: expansion of working band of microwave amplifier frequencies with preservation of amplification ratio.

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