FIELD: industrial inorganic synthesis.
SUBSTANCE: production of microelectronics-suitable boron trichloride comprises reaction of boron carbide with gaseous chlorine in fluidized bed in presence of carbon-containing reducing agent on heating. Chlorination is carried out at fluidization number decreasing with the height of bed from 2.8-2.0 in lower border of bed to 1.5-1.0 in its higher border. Boron carbide is fed from the top of reactor in countercurrent to chlorine flow.
EFFECT: increased purity of product, significantly reduced production expenses, and simplified technology.
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