METHOD OF FORMING THIN ORDERED SEMICONDUCTOR FILAMENTARY NANOCRYSTALS WITHOUT PARTICIPATION OF EXTERNAL CATALYST ON SILICON SUBSTRATES Russian patent published in 2020 - IPC C30B29/62 C30B29/42 C30B23/08 B82B3/00 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: invention relates to production of semiconductor nanomaterials. Method of forming thin ordered semiconductor filamentary nanocrystals (FNC) of gallium arsenide on silicon is characterized by the fact that on silicon substrate with crystallographic orientation of surface (111) or (100) forming an inhibitory layer of silicon oxide (SiO₂) with thickness of 80–120 nm by thermal acidification in nitrogen/water vapour medium at temperature T = 850–950 °C at pressure close to atmospheric pressure, after which an electron resist layer is formed, in which windows are formed by electronic lithography by exposure to an electron beam with subsequent manifestation, wherein development process is stopped by washing in solvent and subsequent drying, then performing reactive ion-plasma etching in plasma-forming mixture of gases SF₆ and Ar with formation of windows in silicon oxide inhibitor layer, in which molecular-beam epitaxy using Ga and As sources is used to grow filamentary nanocrystals of gallium arsenide according to a catalytic method or an autocatalytic method using Ga as a catalyst sputtered on a substrate with formed windows in an inhibitor layer. Resist can be represented by polymethyl methacrylate, the developer being methyl isobutyl ketone-isopropanol and isopropanol as the solvent. Height of ordered FNC is 1.3 mcm, diameter 41 ± 3 nm. Distance between nanocrystals remains equal to pitch between windows in SiO₂ layer and is 3 mcm.

EFFECT: invention enables to obtain thin semiconductor FNC evenly distributed on the surface of the substrate and having a controlled surface density.

1 cl, 2 ex