FIELD: physics.
SUBSTANCE: method of forming a masking image in positive electron resists involves direct etching of the resist directly in the process of exposure with an electron beam in a vacuum. The resists used are polymers which are capable of chain depolymerisation (e.g., polyalkylmethacrylates, polymethyl-isopropenyl ketone, poly-alpha-methylstyrene). Exposure is carried out in the region of the glass-transition temperature of the starting polymer or at higher temperatures.
EFFECT: considerably lower exposure dosage and avoiding the need to use additional reactants in the system.
2 cl, 5 dwg, 1 tbl
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