METHOD FOR PRODUCING STRUCTURES WITH BURIED METAL LAYER Russian patent published in 1995 - IPC

FIELD: semiconductor microelectronics. SUBSTANCE: method involves irradiation of semiconductor crystal plate or dielectric plate with metal ions having energy of 0.7 to 100 MeV at dosage rate of (10¹⁵-10¹⁸) cm^-2 followed by annealing with laser pulse heating at nanosecond pulse length to form fused layer inside crystal. In order to produce strip- or net-like conducting layer, irradiation by metal ions is conducted through template in the form of set of slits or in two passes followed by turning template through 90 deg. To reduce defects on adjacent layers of monocrystal semiconductor, structure is additionally heated by fast thermal annealing. In order to reduce length of structure regions and gate-to-drain distance in similar transistor, second conducting layer is produced by additional irradiation of plate with ion beam at minimum 2 MeV; distance between implantation maxima should be equal to or higher than 2 ΔRp₁+2ΔRp₂, and additional laser annealing should be made on side of second buried layer. EFFECT: enlarged functional capabilities. 4 cl, 4 dwg, 2 tbl