METHOD OF FORMING A SUBMICRON T-SHAPED GATE Russian patent published in 2020 - IPC H01L21/28 H01L21/338 

FIELD: microelectronics.

SUBSTANCE: invention relates to the technology of microelectronics, specifically to the technology of producing microwave monolithic integrated circuits based on semiconductor compounds of the AIIIBV type, in particular to the creation of heterostructural microwave transistors with high electron mobility. Method of forming the gate is one of the key stages of the technological process of producing semiconductor devices, including microwave transistors with high electron mobility. For devices operating in the microwave range, T-like gates with submicron length of the base are made, which have lower resistance and capacity. To form T-shaped gates, multilayer systems of resistors are used, topological pattern in which is formed by known lithographic methods.

EFFECT: invention provides simultaneous increase of resolution and efficiency of technological processes of formation of submicron T-shaped gate.

5 cl, 7 dwg