SEMICONDUCTOR DETECTOR FOR RECORDING CHARGED-PARTICLE ASSOCIATED NEUTRONS IN STATIC-VACUUM NEUTRON GENERATOR Russian patent published in 2005 - IPC

FIELD: nuclear physics; recording charged-particle associated neutrons in static-vacuum neutron generator.

SUBSTANCE: proposed semiconductor detector that can provide for recording charged-particle associated neutrons in static-vacuum neutron generator at recording speed of up to 10⁷ particles per second has semiconductor recording element disposed in insulating case closed both on charged-particle flow end and on opposite end with metal layers electrically connected to current leads; current lead on charged-particle flow end is made in the form of stiff metal hold-down plate with holes opposite sensing zone of semiconductor recording element attached to insulating case; current lead connected at opposite end is made in the form of stiff metal plate pressed by means of spring-loaded member to semiconductor recording element; insulating case is made of vacuum-tight material of gas desorption capacity not over 5 x 10^-8 millibar per cm^-2 per sec^-1; case may be made of ceramics.

EFFECT: enhanced recording speed.

2 cl, 3 dwg