FIELD: physics.
SUBSTANCE: invention relates to semiconductor radiation detectors. The fast neutron detector comprises a fast neutron converter and a surface-barrier GaAs sensor which detects recoil protons, wherein the sensor is made on an n-type gallium arsenide substrate, on the working surface of which an epitaxial high-purity layer of GaAs with thickness of 10-80 mcm is grown, wherein and
where d is the thickness of the epitaxial high-purity GaAs layer, εp is the relative permittivity of the semiconductor, ε0 is the electrical constant, φc is the contact potential difference, q is electron charge, ND is the semiconductor doping level, µe is electron mobility, τe is the electron lifetime, with a platinum Schottky barrier of thickness 500 E formed thereon, and an ohmic contact is formed on the reverse side of the substrate.
EFFECT: high charge collection efficiency of the detector and low sensitivity to gamma-radiation.
1 dwg
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Authors
Dates
2014-11-10—Published
2013-06-28—Filed