FAST NEUTRON DETECTOR Russian patent published in 2014 - IPC G01T3/00 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor radiation detectors. The fast neutron detector comprises a fast neutron converter and a surface-barrier GaAs sensor which detects recoil protons, wherein the sensor is made on an n-type gallium arsenide substrate, on the working surface of which an epitaxial high-purity layer of GaAs with thickness of 10-80 mcm is grown, wherein and where d is the thickness of the epitaxial high-purity GaAs layer, ε_p is the relative permittivity of the semiconductor, ε₀ is the electrical constant, φ_c is the contact potential difference, q is electron charge, N_D is the semiconductor doping level, µ_e is electron mobility, τ_e is the electron lifetime, with a platinum Schottky barrier of thickness 500 E formed thereon, and an ohmic contact is formed on the reverse side of the substrate.

EFFECT: high charge collection efficiency of the detector and low sensitivity to gamma-radiation.

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