SEMICONDUCTOR DETECTOR FOR DETECTING NEUTRON-ACCOMPANYING CHARGED PARTICLES IN NEUTRON GENERATOR WITH STATIC VACUUM Russian patent published in 2014 - IPC G01T1/24 

FIELD: physics.

SUBSTANCE: semiconductor detector for detecting neutron-accompanying charged particles in a neutron generator with a static vacuum comprises a semiconductor detecting element placed in a dielectric housing, closed on both the side of the charged particle stream and the opposite side by metal layers electrically connected to current terminals, wherein the dielectric housing is made of vacuum-tight material with gas desorption capacity of no more than 5·10^-8 mbar·cm^-2·s^-1, the detecting element is in form of a heterostructure which includes a substrate made of silicon carbide of the type n⁺6H-SiC, on which an expitaxial layer of silicon carbide of the type n-6H-SiC is grown, provided on the side opposite the substrate with a rectifying layer in the form of a Schottky barrier.

EFFECT: high radiation resistance of the semiconductor detector and efficiency of detecting neutron-accompanying charged particles.

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