FIELD: electric measurement technology.
SUBSTANCE: proposed method that can be used for contactless evaluation of near-surface bend of semiconductor specimen energy bands including wafers covered with natural oxide or that applied by dielectric technique involves use of Kelvin probe to measure surface potentials in the dark and at least two times while illuminating semiconductor surface with light from inherent absorption region with known intensity ratio. Contact potential differences obtained in the dark and at different light intensity ratios are used to calculate near-surface bend of semiconductor energy bands by numeric solution of equation derived from constant value of near-surface semiconductor area.
EFFECT: enlarged measurement range and enhanced precision of method.
1 cl, 1 tbl
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