METHOD OF DETERMINATION OF PROFILE OF CONCENTRATION OF CURRENT CARRIERS IN SEMICONDUCTOR STRUCTURES WITH USAGE OF SEMICONDUCTOR-ELECTROLYTE CONTACT Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: method of determination of profile of concentration of current carriers in semiconductor structures with usage of semiconductor-electrolyte contact includes local layer by layer etching of structure, measurement of current of electrochemical reaction and calculated determination of concentration of current carriers. Measurement of current of electrochemical reaction is performed while semiconductor structure is illuminated by light with energy of quantum equal to energy of transition (λ₃-λ₁) of Brillouin zone of semiconductor material of structure. Illumination intensity amounts to 10¹³-10¹⁴ cm^-2s^-1. External voltage under which photoflux is equal to zero is applied simultaneously with illumination to semiconductor structure. EFFECT: improved authenticity of determination of profile of concentration of current carriers. 5 dwg, 1 tbl