FIELD: electron-beam technology; production of a superfine materials.
SUBSTANCE: the invention is pertaining to the field of electron-beam technology and may be used for production of a superfine materials, in particular, the ultra-disperse silicon dioxide. The method of production of the ultra-disperse silicon dioxide provides for: heating of a silicon-containing substance by a relativistic electron beam at an atmospheric pressure reaching up to a vapor-phase state; action on a melt by an ultrasonic sound with a frequency from 0.15 up to 5 MHz; chilling it in a gas stream; coagulation and separation of the formed two-phase system. The technical result is increased productivity at production of the ultra-disperse silicon dioxide.
EFFECT: the invention ensures increased productivity at production of the ultra-disperse silicon dioxide.
1 dwg, 3 tbl
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