VOLTAGE LIMITER WITH ENHANCED POWER Russian patent published in 2005 - IPC

FIELD: semiconductor voltage limiter, Zener diodes, varactors and other semiconductor devices, applicable in protection of electronic devices against overvoltages, as well as in designing of the mentioned devices.

SUBSTANCE: the voltage limiter has a semiconductor silicon crystal with one or two PN junctions positioned in an insulating flat housing, connected to the positive and negative leadouts via metal gaskets being thermal compensators. The depth of occurrence of the PN junction from the crystal surface makes up less than 50 μm, which allows instantly transmit heat arising after the action of the power pulse on heat capacitive compensators. The heat conduction and the heat capacity of each metal gasket exceeds respectively the heat conduction and heat capacity by more than twice. The thickness of the metal gaskets and leadouts are selected from the condition of provision of a definite relation between the amount of heat that can be transferred by the heat conduction by one leadout to the radiator and the amount of heat liberated at one PN junction at an action of the power pulse.

EFFECT: enhanced power and operating reliability of the voltage limiter in the housing for surface mounting, with the device thickness remaining unchanged.

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