METHOD FOR OBTAINING A MULTI-LAYER HETEROEPITAXIAL P-I-N STRUCTURE IN THE AlGaAs SYSTEM BY THE LIQUID PHASE EPITAXY METHOD Russian patent published in 2018 - IPC H01L21/208 

FIELD: electrical engineering.

SUBSTANCE: use for the fabrication of semiconductor p-i-n structures based on the GaAs-GaAlAs system by liquid epitaxy methods. Essence of the invention consists in, that the method involves growing in a single technological cycle a multilayer semiconductor GaAs-GaAlAs structure, that is formed from a composition of three successive epitaxial GaAs or GaAlAs layers on a GaAs substrate p⁺-type conductivity, consisting of a buffer layer of p-type conductivity, an operating high-resistivity p^--i-n^--layer and a contact n⁺layer, whereby the buffer p-layer being grown as a three-component Ga_1-xAl_xAs system, where x = 0.36–0.40, with carrier concentration in the interval 1⋅10¹⁷–5⋅10¹⁷ cm^-3, the contact n-layer is doped to the carrier concentration in the interval 2⋅10¹⁸–5⋅10¹⁸ cm^-3 at a thickness in the interval of 120–150 mcm, and after the end of epitaxial overgrowth of layers and scrubbinging of structures from the residues of the solution-melt, a selective complete chemical removal of the GaAs substrate of the p-type conductivity is performed.

EFFECT: providing the ability to reduce the forward voltage drop at a given current, reduce heat losses, reduce reverse leakage currents at elevated ambient temperatures, increasing the operating temperature of the diode, increasing the operating current density, reducing the size of the chip, increasing the yield percentage.

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