FIELD: microelectronics engineering. SUBSTANCE: method involves covering film surface with silicon layer whose thickness equals one and a half to three depths of nanostructure formation in silicon layer; spraying silicon surface with stream of nitrogen molecule ions in vacuum, nitrogen ion energy, nitrogen ion angle of flow relative to silicon surface, depth of nanostructure formation and nanostructure height being chosen basing on nanostructure wavelength ranging between 30 and 180 nm before formation of nanostructure spaced apart from film at one third of wavelength on nanostructure wave valleys with wave crest positioned perpendicular to projection of ion flow on silicon surface; transferring nanostructure topography to film surface with nanostructure and film materials being removed by ion-beam or plasma etching. EFFECT: improved formation of nanotopography on film surface. 9 cl, 16 dwg
