FIELD: microelectronics.
SUBSTANCE: invention relates to microelectronics, methods for monitoring and analyzing the structure of integrated circuits, and to processes of liquid etching. Summary of the invention: aligning the local thick unevenness of the silicon dioxide layer on the surface of an IC chip formed during the sequential removal of topological layers, is produced by means of local liquid etching, which is performed by "painting" the area with a thicker layer of silicon dioxide by means of a pointed porous rod saturated with an etchant.
EFFECT: aligning the local uneven thickness of the silicon dioxide layer.
1 cl, 1 dwg
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