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2 194 336

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Application

2001114761/28, 2001-06-01

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Start date

2001-06-01

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Actual filing date

2001-06-01

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Published

2002-12-10

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Inventor

Trusov A.A.Gushchin O.P.Bokarev V.P.

(73)

Holder

Aktsionernoe Obshchestvo Otkrytogo Tipa Molekuljarnoj Ehlektroniki I Zavod

METHOD FOR REACTIVE ION ETCHING OF SILICON NITRIDE Russian patent published in 2002 - IPC

Abstract RU 2194336 C1

FIELD: microelectronics. SUBSTANCE: method used for silicon nitride reactive ion etching on wafer surfaces in manufacturing very large-scale integrated circuits includes etching of Si3N4 surface in plasma of gas mixture of freon with oxygen and argon. Used as freon is 1,2,2,2 tetrafluoroethane (C2F4H2). EFFECT: enhanced etching selectivity of silicon nitride relative to silicon dioxide. 2 tbl

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RU 2 194 336 C1

Authors

Trusov A.A.

Gushchin O.P.

Bokarev V.P.

Dates

2002-12-10—Published

2001-06-01—Filed

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