PROCESS OF PLASMA ETCHING OF CONTACT WINDOWS IN INSULATING AND PASSIVATING LAYERS OF DIELECTRIC BASED ON SILICON Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: process of plasma etching of contact windows in insulating and passivating layers of dielectrics based on silicon involves treatment of layer of dielectric in individual diode reactor under pressure of 300 to 1200 Pa and density of HF power from 4.0 to 8.0 W/sq.cm in plasma of four-component mixture with following proportion of components: octafluoridepropane or hexafluoridethane 12-37; sulfur hexafluoride or nitrogen trifluoride 1-4; oxygen 1-4; helium 55-86. EFFECT: increased rate of etching, reduced precipitation of fluoridecarbon polymers. 2 dwg, 1 tbl