FIELD: powder metallurgy.
SUBSTANCE: method relates to production of composite materials with metal matrix reinforced by particles of silicon carbide, fill factor exceeding 45%. Method can be used in manufacture of powder semiconductor devices and power converters. According to proposed method silicon carbide powder of different fractions is mixed with 1-50 vol.% of boron carbide powder. Vibratory compacting is carried out to get blank which is subjected additionally to pressing in air with isothermal holding. Said blank is impregnated with matrix melt under pressure, and directed crystallization is carried out by creating temperature gradient at solidified front.
EFFECT: improved density, heat conductivity, reduced linear thermal expansion coefficient, possibility of getting complex-shaped articles.
6 cl, 4 ex, 1 tbl
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Authors
Dates
2005-10-10—Published
2004-02-25—Filed