FIELD: semiconductor engineering.
SUBSTANCE: method can be used for measuring volt-ampere, volt-farad characteristics and other characteristics of semiconductor diodes and transistors. The method allows measuring parameters of non-linear units at random mode of exploitation. System is subject to influence of signal which presents real mode of exploitation of system. Time series of voltage and current are chosen as response. Model equations are composed correspondingly to chosen circuit by means of Kirchhoff's laws. Characteristics of module equations are determined by means of reconstruction while taking time series measured into account.
EFFECT: improved precision of measurement.
7 dwg
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