METHOD OF DETERMINING ELECTROPHYSICAL PARAMETERS OF CAPACITOR STRUCTURE OF MEMRISTOR CHARACTERISING MOULDING PROCESS Russian patent published in 2016 - IPC H01L21/66 G01R31/26 B82Y35/00 

FIELD: measurement technology.

SUBSTANCE: invention relates to nanotechnology, namely to methods of measuring parameters of nano structures, and can be used for determination of electro-physical parameters of capacitive structure memristor characterizing process of molding. Method to determine electro-physical parameters of capacitive structure of memristor characterizing process of molding, includes measurement of volt-ampere and impedance characteristics. Novelty is that selected memristors in form of metal-dielectric-semiconductor capacitors with comparable vessels dielectric and space-charge region of semiconductor, and with no fixation (pinning) Fermi level on this interface; for these structures spectral characteristic of the capacitor is measured photoEMF; from measured characteristics determined electro-physical parameters of structures, which characterise originating in forming change in dielectric, and at boundary of dielectric/semiconductor and semiconductor: capture of charge carriers surface states on boundary dielectric/semiconductor, movement of ions, electrochemical reaction, defects formation.

EFFECT: invention provides the extended diagnostic capabilities of measuring characteristics and high degree of prediction of electro-physical parameters of memristors in form of MIS-condensers to optimise production at their development, besides, invention extends range of methods of measuring technology in up-to-date production of memristors, which are basis of new generation devices of non-volatile memory.

2 cl, 4 dwg