SILICON TIP TO GLASS SUBSTRATE SECURING METHOD Russian patent published in 2006 - IPC B23K20/10 B23K103/18 

FIELD: microelectronics, possibly manufacture of displays using low-voltage cathode luminescence.

SUBSTANCE: method comprises steps of mechanically working and chemically cleaning surfaces of silicon tip and glass substrate; applying aluminum layer on surfaces of silicon tip and glass substrate; then applying onto aluminum layer of silicon tip aluminum foil preliminarily subjected to chemical cleaning and welding it by means of ultrasonic welding; placing silicon tip with welded aluminum foil onto glass substrate preliminarily coated with aluminum layer; then welding protruded edges of aluminum foil to aluminum layer of glass substrate with use of ultrasonic welding.

EFFECT: possibility for joining silicon tip and glass substrate with high resistance of their joint against outer factors.

2 cl, 4 dwg, 1 ex