FIELD: electricity; lighting.
SUBSTANCE: structure of a light emitting device comprises a support substrate comprising a body and a plurality of vias extending through an entire thickness of the body; and a semiconductor light emitting device comprising a light emitting layer, sandwiched between an n-type region and a p-type region, wherein the semiconductor light emitting device is bonded to the support substrate by means of a dielectric bonding layer; wherein the support substrate is no wider than the semiconductor light emitting device, wherein the bonding layer is a first bonding layer formed on the semiconductor light emitting device, wherein said structure comprises a second bonding layer formed on the support substrate.
EFFECT: wafer scale process may reduce cost by permitting some processing steps on the wafer scale, which are typically performed during dividing a wafer scale, as well as increase efficiency of emitting.
14 cl, 10 dwg
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| CONTACT FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE | 2008 |
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| REFLECTING CONTACT FOR SEMICONDUCTOR LIGHT-EMITTING DEVICE | 2010 |
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