NON-PLANAR LOW-FREQUENCY POWER RECTIFIER DIODE AND METHOD OF MAKING SAID DIODE Russian patent published in 2011 - IPC H01L29/861 H01L21/329 

FIELD: physics.

SUBSTANCE: non-planar low-frequency power rectifier diode on working current over 1000 A and working voltage not lower than 1000 V has an inner contact on which is attached a non-planar semiconductor silicon structure having a tubular shape made from a solid silicon ingot grown the <111> direction, on which a tubular external contact is attached. The inner contact is in form of a copper bushing with a longitudinal inner cavity for passage of coolant or is in form of a flexible copper spiral wound winding to winding, on whose outer surface of which a band in form of a molybdenum layer is soldered. The non-planar silicon semiconductor p+-p-n-n+ composition is a set of closed symmetrical semiconductor monocrystalline layers formed through diffusion on the base of a hollow substrate with walls of varying thickness. A protective dielectric layer is deposited on the surface of the faces of the composition on the output boundaries of the p-n junction. A highly doped p+ silicon region is formed on the outer surface of the non-planar structure by sputtering an aluminium layer for attaching the tubular external current-conducting contact. The non-planar semiconductor composition and the external current-conducting contact attached thereto are mounted between glass-ceramic washers attached to the band.

EFFECT: improved operational and technical characteristics.

3 cl, 7 dwg