FIELD: microelectronics including vacuum microelectronics.
SUBSTANCE: proposed electron source that can be used in field-effect emissive devices, and field-effect emissive cathodes in particular, as well as in other emissive devices, such as field-effect emissive displays, sources for electron guns, microwave devices, and the like has its field-effect emitter formed by whisker epitaxially grown on substrate. Ballast resistor and active area are provided within field-effect emitter and/or on its surface. Ballast resistor can be implemented in the form of n-n+ or p-p+, or p-n semiconductor junctions, or insulating layer transverse to charge-carried flow. Control components for such electron sources are disposed vertically.
EFFECT: enhanced stability and uniformity of electron flows.
48 cl, 7 dwg, 3 ex
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