FIELD: microelectronics including vacuum microelectronics.
SUBSTANCE: proposed electron source that can be used in field-effect emissive devices, and field-effect emissive cathodes in particular, as well as in other emissive devices, such as field-effect emissive displays, sources for electron guns, microwave devices, and the like has its field-effect emitter formed by whisker epitaxially grown on substrate. Ballast resistor and active area are provided within field-effect emitter and/or on its surface. Ballast resistor can be implemented in the form of n-n+ or p-p+, or p-n semiconductor junctions, or insulating layer transverse to charge-carried flow. Control components for such electron sources are disposed vertically.
EFFECT: enhanced stability and uniformity of electron flows.
48 cl, 7 dwg, 3 ex
| Title | Year | Author | Number |
|---|---|---|---|
| POINT STRUCTURES, DEVICES BUILT AROUND THEM, AND THEIR MANUFACTURING METHODS | 2000 |
|
RU2240623C2 |
| SELF-EMITTING CATHODE AND DEVICE WHICH USES IT | 1994 |
|
RU2074444C1 |
| ELECTRON-OPTICAL SYSTEM, MATRIX ELECTRON-OPTICAL SYSTEM, DEVICES ON THEIR BASES ( VERSIONS ) | 1996 |
|
RU2115194C1 |
| AUTOEMISSION TRIODE, DEVICE BUILT AROUND IT, AND ITS MANUFACTURING PROCESS | 1996 |
|
RU2118011C1 |
| CANTILEVER WITH WHISKER PROBE AND METHOD FOR MANUFACTURING SAME | 1999 |
|
RU2275591C2 |
| SOURCE OF ELECTRONS WITH FIELD-EMISSION EMITTERS | 2014 |
|
RU2586628C1 |
| PHOTOEMITTER MATRIX X-RAY SOURCE | 2021 |
|
RU2774675C1 |
| FIELD-EFFECT ELECTRON EMITTER | 1998 |
|
RU2149477C1 |
| AUTOEMISSION ELECTRON SOURCE | 1996 |
|
RU2147781C1 |
| FIELD EMISSION EMITTER WITH NANOCRYSTALLINE DIAMOND FILM | 2021 |
|
RU2763046C1 |
