POINT STRUCTURES, DEVICES BUILT AROUND THEM, AND THEIR MANUFACTURING METHODS Russian patent published in 2004 - IPC

Abstract RU 2240623 C2

FIELD: field-effect emissive electronics.

SUBSTANCE: novel design alternates are proposed for electronic devices, such as scanning probes and field-effect transistors, built around point structures. Points are made of whiskers grown from gas phase using steam-liquid-crystal mechanism. New mechanical designs are proposed for manufacturing field-effect emitters and probes for magnetic, electrostatic, morphologic, and other investigations using specific technology. New mechanical designs are also proposed for manufacturing multilever probes.

EFFECT: enhanced effectiveness of emission due to enlarged number of emitters having same spatial value.

74 cl, 23 dwg, 8 ex

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RU 2 240 623 C2

Authors

Givargizov E.I.

Givargizov M.E.

Dates

2004-11-20Published

2000-05-31Filed