SELF-EMITTING CATHODE AND DEVICE WHICH USES IT Russian patent published in 1997 - IPC

FIELD: electron emission devices, such as flat displays, electron guns and so on. SUBSTANCE: each emitter has high electric resistance which is of same order of magnitude as resistance of vacuum gap. So emitters function as dummy resistors which equalize emission currents. This is achieved by corresponding shape of emitters (high height, low cross section, low sharpness at vertex) and high specific resistance of material they are made from. Such design is provided by manufacturing emitters from thread-like epitaxial crystals which are developed on single-crystal silicon substrate. In addition cathode design provides high field amplification at emitter vertex due to their high height and sharpness at vertex. This results in possibility to operate at low voltage level. In addition significant decrease in voltage levels is achieved by design of self- emitting cathode which vertex is covered with diamond or diamond- like material which has low electron work function. This cover also increases emitter reliability due to protection against destruction and provides its operations in conditions of rough vacuum. Such self-emitting cathode is used in design of electronic device for visual information presentation, for example display. It is designed as diode matrix in which emitters are located on substrate with conducting tracks and anode is made from conducting tracks on luminescent cover. Projections of anodes to cathode are perpendicular to tracks. Anode also serves as control electrode. EFFECT: increased emission current uniformity, decreased voltage level, increased reliability. 4 cl, 7 dwg