FIELD: extending spectral sensitivity area of infrared photoresistors for correcting their sensitivity area.
SUBSTANCE: spectral sensitivity of semiconductor photoresistors can be corrected without dismounting their optoelectronic systems and without replacing them by direct frontal impact of laser pulse at quantum energy exceeding width of forbidden gap material by minimum 0.1 Fg on sensing element of semiconductor photoresistor built around solid solution.
EFFECT: enhanced uniformity of spectral characteristic due to higher sensitivity of photodetector in short-wave region of spectrum.
1 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| COMBINED SEMICONDUCTOR RECEIVER OF ELECTROMAGNETIC EMISSION | 2014 |
|
RU2578103C1 |
| STRUCTURE PHOTOSENSITIVE TO INFRARED RADIATION AND METHOD FOR ITS MANUFACTURE | 2021 |
|
RU2769232C1 |
| PHOTODETECTOR UNIT | 2003 |
|
RU2244365C1 |
| DICHROMATIC PHOTODETECTOR WITH ELECTRONIC SWITCHING OVER OF RANGES | 1991 |
|
SU1823722A1 |
| OPTOELECTRONIC SYSTEM FOR DETERMINING SPECTRAL-ENERGY PARAMETERS AND COORDINATES OF INFRARED LASER RADIATION SOURCE | 2015 |
|
RU2616875C2 |
| METHOD OF CONTROLLING LIGHT SENSITIVITY OF LASER RADIATION DETECTOR IN INFRARED RANGE | 2009 |
|
RU2418344C1 |
| PHOTOSENSITIVE STRUCTURE | 2008 |
|
RU2373606C1 |
| INFRARED RADIATION SENSITIVE STRUCTURE AND METHOD OF MAKING SAID STRUCTURE | 2009 |
|
RU2396635C1 |
| INFRARED PHOTOSENSITIVE STRUCTURE AND METHOD OF MAKING SAME | 2013 |
|
RU2529457C1 |
| TWO-COLOURED CCD | 0 |
|
SU1630576A1 |
