COMBINED SEMICONDUCTOR RECEIVER OF ELECTROMAGNETIC EMISSION Russian patent published in 2016 - IPC H01L31/352 G01T1/24 

Abstract RU 2578103 C1

FIELD: electricity.

SUBSTANCE: combined semiconductor receiver of electromagnetic emission includes coaxial channels registering optical and high-energy electromagnetic emission and it is developed on the basis of alternating epitaxial-matched layers of semiconductor materials sensitive in the respective spectral ranges with or without p-n junctions, the sensitive layers are placed at different sides of the substrate, thickness of the material sensitive to high-energy electromagnetic emission in the receiver is twice more than sensitive material of an optical detector; a layer of semiconductor material sensitive to high-energy electromagnetic emission is used as a filter locking emission of optical range, and on the basis of this material the optical detector of optical range is formed.

EFFECT: simplified design and expanded functionality is provided for the systems registering electromagnetic emission.

1 dwg

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RU 2 578 103 C1

Authors

Sredin Viktor Gennadevich

Vasileva Julija Viktorovna

Vojtsekhovskij Aleksandr Vasilevich

Dates

2016-03-20Published

2014-11-10Filed