INFRARED PHOTOSENSITIVE STRUCTURE AND METHOD OF MAKING SAME Russian patent published in 2014 - IPC H01L31/101 H01L31/18 

FIELD: physics.

SUBSTANCE: in an infrared photosensitive structure, having series-connected substrate, the top layer of which is made of CdTe, a lower variable-gap layer made of Hg_1-xCd_xTe, wherein the value of x gradually decreases from a value in the range of (x_d+0.1)-1, to a value x_d, a detector layer made of Hg_1-xCd_xTe, where x=x_d=0.2-0.3, as well as series-connected top variable-gap layer made of Hg_1-xCd_xTe, wherein the value of x gradually increases from a value x_d to a value in the range of (x_d+0.1)-1, an insulating layer made of CdTe, a dielectric layer made of SiO₂, a dielectric layer made of Si₃N₄, and a top conducting layer which is transparent for infrared radiation; the detector layer further includes alternating barrier layers and quantum well layers made of Hg_1-xCd_xTe, the minimum number of which is equal to three, with optional addition of a number of pairs of alternating layers from 1 to 100, wherein at the boundary between the quantum well layer and the barrier layer, the values of x change abruptly in the range of x_b=0.5-1.0 and x_ya=0-0.15 for thickness of each of the barrier layers of 20-100 nm and thickness of each of the quantum well layers of 5-20 nm.

EFFECT: wider operating frequency range of a photosensitive structure and wider field of use of said structure.

13 cl, 1 dwg