STRUCTURE PHOTOSENSITIVE TO INFRARED RADIATION AND METHOD FOR ITS MANUFACTURE Russian patent published in 2022 - IPC H01L31/216 H01L31/224 H01L31/296 

FIELD: optical detector technology.

SUBSTANCE: invention relates to photodetector devices of the infrared wavelength range and the technology for their manufacture. The structure photosensitive to infrared radiation includes a substrate, a first layer of Cd_xHg_1-xTe with a variable composition located on the substrate, in which x varies from 1 at the boundary with the substrate to x_PS at the boundary with the absorbing layer, a homogeneous absorbing layer of Cd_xHg_1-xTe with a composition of x_PS =0.22-0.4 2-4 microns thick located on the absorbing layer, a second layer of Cd_xHg_1-xTe with a variable composition located on the first layer with a variable composition , in which x varies from x_PS at the boundary with the absorbing layer to x_B at the boundary with the barrier layer, located on the second layer with a variable composition, a homogeneous barrier layer of Cd_xHg_1-xTe with a composition of x_B = 0.6-0.7 0.2-0.5 microns thick, located on the barrier layer, a third layer of Cd_xHg_1-xTe with a variable composition, in which x varies from x_B at the boundary with the barrier layer to x_C at the boundary with the contact layer, located on the third layer with a variable composition, a homogeneous contact layer of Cd_xHg_1-xTe with a composition of x_CS=0.22-0.4 1-2 microns thick, the fourth layer of Cd_xHg_1-xTe with variable composition located on the contact layer, in which x varies from x_CS at the boundary with the contact layer to x_D = 0.6-1.0, while a passivating layer is located on the fourth layer of Cd_xHg_1-xTe with a variable composition, and a metal field electrode of In is applied to the surface of the passivating layer, and the geometric dimensions of the field electrode are chosen so that the minimum distance from the edge of the field electrode to the edge of the area bounding the region of the photosensitive structure would be equal to 1.0-1.2 microns. A method for manufacturing this photosensitive structure is also proposed.

EFFECT: invention provides for the elimination of the observed contribution of surface leakage currents to the formation of a dark signal of a photosensitive nBn structure based on HgCdTe.

22 cl, 4 dwg