FIELD: optical detector technology.
SUBSTANCE: invention relates to photodetector devices of the infrared wavelength range and the technology for their manufacture. The structure photosensitive to infrared radiation includes a substrate, a first layer of CdxHg1-xTe with a variable composition located on the substrate, in which x varies from 1 at the boundary with the substrate to xPS at the boundary with the absorbing layer, a homogeneous absorbing layer of CdxHg1-xTe with a composition of xPS =0.22-0.4 2-4 microns thick located on the absorbing layer, a second layer of CdxHg1-xTe with a variable composition located on the first layer with a variable composition , in which x varies from xPS at the boundary with the absorbing layer to xB at the boundary with the barrier layer, located on the second layer with a variable composition, a homogeneous barrier layer of CdxHg1-xTe with a composition of xB = 0.6-0.7 0.2-0.5 microns thick, located on the barrier layer, a third layer of CdxHg1-xTe with a variable composition, in which x varies from xB at the boundary with the barrier layer to xC at the boundary with the contact layer, located on the third layer with a variable composition, a homogeneous contact layer of CdxHg1-xTe with a composition of xCS=0.22-0.4 1-2 microns thick, the fourth layer of CdxHg1-xTe with variable composition located on the contact layer, in which x varies from xCS at the boundary with the contact layer to xD = 0.6-1.0, while a passivating layer is located on the fourth layer of CdxHg1-xTe with a variable composition, and a metal field electrode of In is applied to the surface of the passivating layer, and the geometric dimensions of the field electrode are chosen so that the minimum distance from the edge of the field electrode to the edge of the area bounding the region of the photosensitive structure would be equal to 1.0-1.2 microns. A method for manufacturing this photosensitive structure is also proposed.
EFFECT: invention provides for the elimination of the observed contribution of surface leakage currents to the formation of a dark signal of a photosensitive nBn structure based on HgCdTe.
22 cl, 4 dwg
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Authors
Dates
2022-03-29—Published
2021-06-23—Filed