MICROWAVE OSCILLATOR BUILT AROUND TRANSISTOR Russian patent published in 2006 - IPC H03B7/14 

FIELD: electronic engineering; using electricity for tuning frequency of microwave oscillators built around transistor.

SUBSTANCE: proposed microwave oscillator has Schottky-barrier field-effect transistor made of semiconductor material of group A^IIIB^V, oscillatory system connected thereto, and second Schottky-barrier field-effect transistor also made of semiconductor material of group A^IIIB^V and connected in common-source circuit; other end of oscillatory system is connected to drain of second field-effect transistor. Positive-polarity dc voltage is applied to drain of second field-effect transistor and control voltage as well as negative-polarity dc voltage of (0.6 - 0.8)Uo, to its gate, where Uo is cut-off voltage of second Schottky-barrier field-effect transistor. This microwave oscillator can be produced as hybrid integrated device or as monolithic integrated one.

EFFECT: ability of using linear mechanism for frequency tuning from control voltage and enlarged frequency tuning range.

3 cl, 2 dwg