TRANSISTOR-BASED SHF GENERATOR Russian patent published in 2009 - IPC H03B7/14 

FIELD: electrical engineering.

SUBSTANCE: invention relates to electronic engineering and, particular, to semi-conducting SHF instruments based generators with frequency stabilisation. SHF generator in accordance with the invention comprises a unipolar transistor with Schottky barrier-like gate and dielectric resonator with or without electrical frequency tuning by means of the second unipolar transistor with voltage-controlled Schottky barrier-like gate. SHF generator is realised as solid integral diagram on the front surface of semi-conducting material crystal. In addition, the semi-conducting material crystal with solid integral diagram is situated on the opposite side of dielectric resonator.

EFFECT: wide range of frequency tuning, increase output SHF power, reduced dimensions.

4 cl, 4 dwg