MICROWAVE OSCILLATOR Russian patent published in 2009 - IPC H03B19/14 

FIELD: electrical engineering.

SUBSTANCE: present invention relates to electrical engineering, to electronics and transistor based microwave oscillators. The microwave oscillator has active and frequency and power controlling elements, each of which is made from a Schottky-barrier field-effect transistor on a common source circuit. One end of the oscillating system is connected to the gate of the Schottky-barrier field-effect transistor of the active element, and the other is connected to drain of the Schottky-barrier field-effect transistor of the element controlling the frequency. The active element is connected to the corresponding sources through power supply filters. The above mentioned is made in form of an integrated circuit on one side of an insulating substrate. On the other side of the insulating substrate there is a metallic film with thickness 5-10 mcm, in which a longitudinal axially symmetrical aperture is made, short circuited on one end. The conductor of the oscillating system, connected to the gate of the Schottky-barrier field-effect transistor of the active element, is perpendicular to the longitudinal axially symmetrical aperture. The source and drain of the Schottky-barrier field-effect transistor of the element controlling power are connected to the metallic film through plated-through holes in the insulating substrate on both sides of the longitudinal axially symmetrical aperture at a distance of a quarter-wavelength, from the short circuited end of the longitudinal axially symmetrical aperture and from the above mentioned conductor of the oscillating system.

EFFECT: wider range of frequency tuning with increase in output power of microwaves and, consequently, increase in efficiency.

3 cl, 3 dwg, 3 ex