TRANSISTORIZED MICROWAVE OSCILLATOR WITH ELECTRICAL FREQUENCY RETUNING Russian patent published in 2007 - IPC H03B7/14 

FIELD: electronic engineering.

SUBSTANCE: the transistorized microwave oscillator with an electrical frequency retuning has an active device a field-effect transistor with a gate in the form of a Schottky barrier connected according to the common-source circuit, two film resistors with resistance R1 and R2 respectively. The second field-effect transistor with a gate in the form of a Schottky barrier also connected according to the common-source circuit is used as the voltage-controlled semiconductor device. The end of the oscillatory system is connected to the drain of the second field-effect transistor, some of the ends of both film resistors are connected to the gate of the first field effect transistor, and the other ends of these film transistors are connected to the common source and the gate of the second field-effect transistor respectively, control voltage of he negative polarity is applied to the gate of the second field-effect transistor, this voltage varies within 0 to Uo, where Uo - the negative pinch-off voltage of the second field-effect transistor.

EFFECT: enhanced band of frequency retuning, and provided creation of a transistorized microwave oscillator of a monolithic modification.

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