FIELD: semiconductor devices, detectors of ionizing radiation.
SUBSTANCE: cadmium telluride nanopowder with average particle size of 7-10 nm is placed into press-form and introduced into press chamber. Sample is pressed under 600-650 MPa at 20-25°C and held under pressure for 10-30 min. Obtained product (CdTe) has hardness of 1200 MPa that is more than by 2.5 times higher in contrast to known CdTe crystals.
EFFECT: bulk material of increased mechanical hardness.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR PRODUCING THREE-DIMENSIONAL MATERIAL OF ZINC-CADMIUM TELLURIDE BY COLD PRESSING | 2006 |
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| METHOD OF PREPARING NANOPOWDER OF ZINC-CADMIUM TELLURIDE HAVING COMPOSITION CdZnTe | 2006 |
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| METHOD FOR CHEMICAL ETCHING OF CADMIUM TELLURIDE | 2004 |
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| METHOD OF PRODUCTION OF OPTICAL FILTER | 2006 |
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| METHOD OF PREPARING ZINC SELENO-TELLURIDE NANOPOWDER | 2010 |
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| METHOD OF MANUFACTURING OPTICAL MATERIALS FROM ZINC AND CADMIUM HALCOGENIDES | 2002 |
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| METHOD FOR PREPARING CRYSTALS OF CHALCOGENIDES OF AB-TYPE | 1991 |
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| METHOD OF OBTAINING NANOPARTICLES OF CADMIUM TELLURIDE WITH WURTZITE STRUCTURE | 2008 |
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| PROCESS OF MANUFACTURE OF SENSITIVE ELEMENTS FOR SEMICONDUCTOR DETECTORS OF PULSE IONIZING RADIATION BASED ON CADMIUM TELLURIDE | 1994 |
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| DETECTOR OF PULSED IONIZING EMISSION | 1991 |
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SU1814399A1 |
