METHOD FOR CHEMICAL ETCHING OF CADMIUM TELLURIDE Russian patent published in 2006 - IPC H01L21/461 

FIELD: semiconductor device manufacture.

SUBSTANCE: proposed method for chemical etching of cadmium telluride using nano-powder technology in production of semiconductor devices, such as ionizing radiation detectors and optical components for infrared lasers based on cadmium telluride (CdTe)ceramic, as well as for analyzing microstructure of material and parts made of this ceramic includes detection of grain boundary in this ceramic by chemical etching at temperature of 18 to 25 °C for 1-2 minutes in solution incorporating 6-10 volume percent of bromine and 900-94 volume percent of methyl alcohol. Grain structure detected in the course of etching is examined by means of optical microscope. This makes it possible to control microstructure of mentioned material influencing characteristics important for practical application, such as transmission in infrared radiation region and electrical resistance.

EFFECT: facilitated study of microstructure due to etching of grain boundaries using nano-powder technology.

1 cl, 1 dwg, 1 tbl