FIELD: manufacture of semiconductor devices, possibly manufacture of volume material of high mechanical strength.
SUBSTANCE: method comprises steps of charging nano-powder of zinc-cadmium telluride with means size of particles 10 nm into press-mold and placing it in chamber of press; loading sample till pressure 350-500 MPa at temperature (+20) - (+25)°C and soaking it under such pressure for 1 - 10 min for producing material whose hardness is in range 1010 - 1860 MPa. Such hardness value exceeds at least by 2 times hardness of crystals of zinc-cadmium telluride produced by known processes.
EFFECT: enhanced hardness of material of zinc-cadmium telluride.
4 ex
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