SECTOR KLYSTRON (ALTERNATIVES) Russian patent published in 2006 - IPC H01J25/12 

FIELD: high- and superhigh-frequency devices.

SUBSTANCE: proposed sector klystron related to O-type devices such as transit-time klystrons used for intensifying high-power electromagnetic fields in radar and communication engineering, as well and in medicine, and the like has cavities, energy inputs and outputs, electron collectors, magnetic focusing system, and electron gun generating axially symmetric electron flow from dispersed electron beams (each may incorporate one or more beams). Device also has isolating walls fanned in radial direction relative to common symmetry axis and forming therein separate spatial parts or sectors whose quantity is not greater than n, where n is integer number greater than unity, having equal or unequal radial angles α. Each sector forms in axial direction amplifier stage of several steps of sector cavities whose electric capacitive gaps pass one or more electron flow beams. A number of such klystrons can be electrodynamically integrated to form klystron complex.

EFFECT: reduced space requirement, enhanced efficiency throughout entire operating frequency band.

7 cl, 3 dwg