METHOD FOR THICK GAS-BEARING FLAT-LAYING FORMATION DEVELOPMENT Russian patent published in 2006 - IPC E21C41/20 

FIELD: mining, particularly multi-slice gas-bearing potassium seams development.

SUBSTANCE: method involves forming developing entries of lower layer in unloaded zone under upper layer goaf along with movement of layer developing entries with respect to transversal cross-section under the protection of interlayer rock benches; creating protective horizontal sheets on ground in lower layer face behind face-end support of lower face developing entry; moving the protective sheets along with face-end support sections, wherein area of formation ground coverage with protective sheets is not less than product of summary protective sheet width equal to developing entry width by protective sheet length equal to distance calculated from face-end support in goaf direction. The distance is characterized by sudden rock and gas outburst from formation ground in lower face goaf at developing entry interface.

EFFECT: increased safety of formation development.

2 dwg