INTEGRATED MULTIFUNCTIONAL MAGNETO-SEMICONDUCTOR DEVICE Russian patent published in 2006 - IPC H01L27/14 

FIELD: integrated magneto-electronics and microelectronics; controlled devices, chips, micromodules, microsystems and the like.

SUBSTANCE: proposed midget-size device controlled by power, spectral, and noise characteristics, of signals, their central frequencies and phases, voltages and currents incorporates provision for multichannel static and dynamic control of signal parameters and characteristics and has transistor, diode, and laser with epitaxial layer of one or other polarity of conductivity grown on semiconductor wafer and ohmic contact covered with this layer. Epitaxial layer is, essentially, ferromagnetic insulating film microresistor disposed in regions between electrodes on side of ohmic contacts with maximal high-frequency magnetic flux density and is magnetized by external field. Ferromagnetic insulating film microresistor can be disposed between ohmic contact and newly introduced electrode for signal supply and/or take-off.

EFFECT: enlarged functional capabilities, simplified design.

15 cl, 55 dwg, 2 tbl