INTEGRATED GRADIENT MAGNETIC TRANSISTORISED SENSOR Russian patent published in 2012 - IPC H01L27/22 

FIELD: electric engineering.

SUBSTANCE: invention relates to semiconducting electronics. The invention deals with the integrated gradient magnetic transistorised sensor, which contains two sensor elements, two amplifiers implemented as two current mirrors based on MOS transistors, and comparison circuit with two inputs. The sensor elements with amplifiers are realised as integral current magnetic sensors based on bipolar magnetic transistors located at the fixed distance from each other so that the gradient of magnetic field distribution by sensors signals difference may be measured. Each of the specified sensors is coupled with the input of related CMOS inverter through the current mirror fulfilling loading function and a current mirror output. The CMOS inverter conditions signals levels from current magnetic sensors and input voltages on the corresponding inputs of comparison circuit containing RS trigger and output cascade and one of RS trigger outputs is coupled with output CMOS cascade.

EFFECT: simplified implementation of design and engineering for sensor measuring gradient of magnetic field.

4 cl, 7 dwg